收藏本站
New Product
SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
t 2
t 2
0.1
0.1
0.05
0.02
N otes:
P DM
t 1
t 1
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 8 1 °C/ W
0.01
Single Pulse
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69006 .
www.vishay.com
6
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIS426DN-T1-GE3 MOSFET N-CH 20V 35A 1212-8
SIS436DN-T1-GE3 MOSFET N-CH D-S 25V PPAK 1212-8
SIS452DN-T1-GE3 MOSFET N-CH D-S 12V 1212-8 PPAK
SIS456DN-T1-GE3 MOSFET N-CH 30V 1212-8 PPAK
SIS468DN-T1-GE3 MOSF N CH 80V 30A 1212-8 PWR PK
SIS892ADN-T1-GE3 MOSFET N-CH 100V D-S PPAK 1212
SIS902DN-T1-GE3 MOSFET N-CH D-S 75V 1212-8 PPAK
SISA10DN-T1-GE3 MOSFET N-CH 30V 30A 1212-8
相关代理商/技术参数
SIS413DN-T1-GE3 功能描述:MOSFET -30V 9.4mOhm@10V -18A P-Ch G-III RoHS:否 制造商:Vishay Semiconductors 晶体管极性:P-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压:+/- 20 V 漏极连续电流:18 A 电阻汲极/源极 RDS（导通）:9.4 mOhms 配置:Single 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:PowerPAK 1212-8 封装:Reel
SIS414DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SIS414DN-T1-GE3 功能描述:MOSFET 20V 20A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIS415DNT-T1-GE3 功能描述:MOSFET 20V .004ohm@10V 35A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIS422 12VDC 制造商:ELESTA relays 功能描述:SAFETY RELAY 12V 制造商:ELESTA relays 功能描述:SAFETY RELAY, 6PST-4NO/2NC, 12VDC, 6A; Coil Voltage VDC Nom:12V; Coil Resistance:215ohm; Contact Current Max:6A; Contact Voltage AC Nom:250V; Contact Voltage DC Nom:440V; Contact Configuration:4PST-NO / DPST-NC; No. of Poles:6 ;RoHS Compliant: Yes
SIS422 12VDC 制造商:ELESTA relays 功能描述:Safety Relay
SIS422 24VDC 制造商:ELESTA relays 功能描述:Safety Relay 制造商:ELESTA relays 功能描述:SAFETY RELAY, 6PST-4NO/2NC, 24VDC, 6A; Coil Voltage VDC Nom:24V; Coil Resistance:860ohm; Contact Current Max:6A; Contact Voltage AC Nom:250V; Contact Voltage DC Nom:440V; Contact Configuration:4PST-NO / DPST-NC; No. of Poles:6 ;RoHS Compliant: Yes
SIS424DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET